The sensor panel (25) has a signal-outputting circuit formed on a monocrystal semiconductor substrate.
センサパネル（２５）は、単結晶半導体基板に形成された信号出力回路を有している。
Provided is a wavelength conversion element including a nonlinear optical crystal using a monocrystal.
単結晶の非線形光学結晶を備える波長変換素子である。
Provided is a method for manufacturing a silicon carbide semiconductor device having a long carrier lifetime without performing an additional step after producing an SiC monocrystal substrate by chemical vapor deposition.
This transparent ceramic makes it possible to provide a magneto-optical element that performs at least as well as terbium gallium garnet or other existing monocrystal materials.
Continuous X-rays irradiated on a monocrystal (diffraction grating) are reflected (diffracted).
この連続X線を単結晶（回折格子）に当てると反射（回折）する。
The present invention has a load cell configured from a member (2) and a sensor chip (1) on which a plurality of resistance elements, square-shaped in plan view, are formed on a surface side of a semiconductor substrate comprising a silicon monocrystal.
Consequently, according to this manufacturing method, an extremely thin piezoelectric monocrystal thin film (10) having the desired thickness can be formed on the SOI substrate (2) by means of ion injection, bonding, and peeling.
More than 120,000 double-glazed PV modules produced by Trina Solar are used in the project, among which more than 10,000 modules are high-efficiency PERC monocrystal modules of Trina Solar.
A method for manufacturing a silicon epitaxial wafer wherein a silicon epitaxial layer is formed by vapor deposition on a major surface of a silicon monocrystal substrate (W) which is arranged within a reaction container (12).
A silicon deposit deposited inside the reaction container (12) is removed by conducting hydrogen chloride gas etching within the reaction container (12) before the introduction of a silicon monocrystal substrate (W), and then the inside of the reaction container (12) is subjected to primary cooling.
A polycrystalline alumina light emitting tube member (3) includes a hollow polycrystalline alumina capillary (1) and at least one transparent monocrystal alumina disc (2).
The silicon epitaxial wafer production process can prevent both the formation of nodules and the occurrence of autodoping in a simple manner during the vapor-phase growth of the silicon monocrystal film.
The system enabled formation of nano-size laminated thin-film structure that is epitaxially grown on a substrate of Si monocrystal, formation of nano-size clusters in which atoms are dispersed on the solid surface, and analysis of periodic structure through observation of real spatial images and low-energy electron diffraction.
Si 単結晶などの基板上にエピタキシャル成長させたナノサイズの積層薄膜構造や極く表面に原子を分散させたナノサイズのクラスターなどの作成と実空間像の観測，低速電子線回折による周期構造の解析などが可能になっている。
Sumitomo Electric manufactures and markets a variety of industrial material products including sintered diamond “SUMIDIA” and the world’s leading synthetic monocrystal diamond “SUMICRYSTAL”.
A group III nitride monocrystal is heat-treated at a temperature of 1000ºC or higher, thereby forming a film comprising an oxide, a hydroxide, and/or an oxyhydroxide containing a group III element.
More than 400,000 double-glazed modules produced by Trina Solar are used for the project, among which 34,000 modules are high-efficiency PERC monocrystal modules of Trina Solar.
The method for forming silicon nitride semiconductor thin film involves epitaxially growing a silicon nitride monocrystal by a metastable solvent epitaxy process on a silicon nitride semiconductor substrate having an off-angle greater than 0º but not more than 0.8º, forming a silicon nitride semiconductor thin film.
The silicon oxide removal apparatus enables, at low cost, the improvement in the effect of removing a silicon oxide from an inert gas that is discharged from a silicon monocrystal production silicon oxide removal apparatus also enables the reuse of the inert gas from which the silicon oxide has been removed effectively.
Provided are a method for forming an SiC semiconductor thin film, whereby a monocrystal SiC epitaxial film in which defects (epitaxy defects such as BPD, TSD, and the like) having adverse effects on device characteristics can be reduced to a sufficient extent; and an SiC semiconductor substrate employing the SiC semiconductor thin film, whereby sufficient improvement in device yield is possible.
The sensor panel (25) has a signal-outputting circuit formed on a monocrystal semiconductor substrate.
センサパネル（２５）は、単結晶半導体基板に形成された信号出力回路を有している。
Provided is a wavelength conversion element including a nonlinear optical crystal using a monocrystal.
単結晶の非線形光学結晶を備える波長変換素子である。
Provided is a method for manufacturing a silicon carbide semiconductor device having a long carrier lifetime without performing an additional step after producing an SiC monocrystal substrate by chemical vapor deposition.
This transparent ceramic makes it possible to provide a magneto-optical element that performs at least as well as terbium gallium garnet or other existing monocrystal materials.
Continuous X-rays irradiated on a monocrystal (diffraction grating) are reflected (diffracted).
この連続X線を単結晶（回折格子）に当てると反射（回折）する。
The present invention has a load cell configured from a member (2) and a sensor chip (1) on which a plurality of resistance elements, square-shaped in plan view, are formed on a surface side of a semiconductor substrate comprising a silicon monocrystal.
Consequently, according to this manufacturing method, an extremely thin piezoelectric monocrystal thin film (10) having the desired thickness can be formed on the SOI substrate (2) by means of ion injection, bonding, and peeling.
More than 120,000 double-glazed PV modules produced by Trina Solar are used in the project, among which more than 10,000 modules are high-efficiency PERC monocrystal modules of Trina Solar.
A method for manufacturing a silicon epitaxial wafer wherein a silicon epitaxial layer is formed by vapor deposition on a major surface of a silicon monocrystal substrate (W) which is arranged within a reaction container (12).
A silicon deposit deposited inside the reaction container (12) is removed by conducting hydrogen chloride gas etching within the reaction container (12) before the introduction of a silicon monocrystal substrate (W), and then the inside of the reaction container (12) is subjected to primary cooling.
A polycrystalline alumina light emitting tube member (3) includes a hollow polycrystalline alumina capillary (1) and at least one transparent monocrystal alumina disc (2).
The silicon epitaxial wafer production process can prevent both the formation of nodules and the occurrence of autodoping in a simple manner during the vapor-phase growth of the silicon monocrystal film.
The system enabled formation of nano-size laminated thin-film structure that is epitaxially grown on a substrate of Si monocrystal, formation of nano-size clusters in which atoms are dispersed on the solid surface, and analysis of periodic structure through observation of real spatial images and low-energy electron diffraction.
Si 単結晶などの基板上にエピタキシャル成長させたナノサイズの積層薄膜構造や極く表面に原子を分散させたナノサイズのクラスターなどの作成と実空間像の観測，低速電子線回折による周期構造の解析などが可能になっている。
Sumitomo Electric manufactures and markets a variety of industrial material products including sintered diamond “SUMIDIA” and the world’s leading synthetic monocrystal diamond “SUMICRYSTAL”.
A group III nitride monocrystal is heat-treated at a temperature of 1000ºC or higher, thereby forming a film comprising an oxide, a hydroxide, and/or an oxyhydroxide containing a group III element.
More than 400,000 double-glazed modules produced by Trina Solar are used for the project, among which 34,000 modules are high-efficiency PERC monocrystal modules of Trina Solar.
The method for forming silicon nitride semiconductor thin film involves epitaxially growing a silicon nitride monocrystal by a metastable solvent epitaxy process on a silicon nitride semiconductor substrate having an off-angle greater than 0º but not more than 0.8º, forming a silicon nitride semiconductor thin film.
The silicon oxide removal apparatus enables, at low cost, the improvement in the effect of removing a silicon oxide from an inert gas that is discharged from a silicon monocrystal production silicon oxide removal apparatus also enables the reuse of the inert gas from which the silicon oxide has been removed effectively.
Provided are a method for forming an SiC semiconductor thin film, whereby a monocrystal SiC epitaxial film in which defects (epitaxy defects such as BPD, TSD, and the like) having adverse effects on device characteristics can be reduced to a sufficient extent; and an SiC semiconductor substrate employing the SiC semiconductor thin film, whereby sufficient improvement in device yield is possible.
